Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Classification of electronic componentsDescription: IC AMP RF LDMOS H-36265-227471+$340.757710+$331.868350+$325.0532100+$322.6827200+$320.9048500+$318.53431000+$317.05282000+$315.5712 -
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Category: Classification of electronic componentsDescription: IC AMP RF LDMOS H-37248-485241+$584.402810+$563.897450+$561.3342100+$558.7711150+$554.6700250+$551.0816500+$547.49311000+$543.3920 -
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Category: Schottky diodeDescription: Z-Rec™ Silicon carbide Schottky diodes, Wolfspeed's series of Wolfspeed SiC Schottky diodes have achieved significant improvements compared to standard Schottky barrier diodes. SiC diodes provide higher breakdown field strength and higher thermal conductivity, significantly reducing power loss at higher switching frequencies. SiC diodes are the perfect choice for efficient, high-voltage applications such as switch mode power supplies and high-speed inverters. 600、 650, 1200, and 1700 voltage ratings with zero reverse recovery current and temperature independent switching behavior for forward recovery voltage. Extremely fast switching time, minimal loss, positive temperature coefficient. Forward voltage devices can be connected in parallel without the need for heat dissipation, reducing the requirements for heat sinks. Optimized specifically for PFC boost diode applications. # # # Diodes and rectifiers, Cree Wolfspeed98721+$149.102110+$145.212550+$142.2304100+$141.1932200+$140.4153500+$139.37811000+$138.72982000+$138.0815 -
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Category: transistorDescription: RF JFET Transistors DC-6GHz 30W GaN Gain@ 4GHz 15dB56631+$679.709010+$655.859650+$652.8784100+$649.8972150+$645.1274250+$640.9537500+$636.78001000+$632.0102 -
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Category: Classification of electronic componentsDescription: RF JFET Transistors DC-6GHz 120W GaN Gain@ 4GHz 13dB43921+$1325.640810+$1313.589525+$1307.563950+$1301.5382100+$1295.5126150+$1289.4870250+$1283.4613500+$1277.4357 -
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Category: Classification of electronic componentsDescription: 350W GAN HEMT 50V 1.2-1.4GHZ FET4861 -
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Category: Classification of electronic componentsDescription: RF SIC HEMT 340W,2620 - 2690MHZ73871+$1394.286310+$1381.611025+$1375.273350+$1368.9356100+$1362.5980150+$1356.2603250+$1349.9226500+$1343.5850 -
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Category: Classification of electronic componentsDescription: 600W GAN HEMT 50V 1.2-1.4GHZ FET8294 -
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Category: Classification of electronic componentsDescription: Transistor, MOSFET, SiC, N-channel, 23 A, 900 V, 0.12 ohm, 15 V, 2.1 V20941+$77.848110+$74.4634100+$73.8542250+$73.3803500+$72.63571000+$72.29722500+$71.82335000+$71.4172 -
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Category: transistorDescription: RF JFET Transistors DC-18GHz 6W GaN Gain@10GHz 17dB65301+$307.737710+$299.709850+$293.5550100+$291.4142200+$289.8086500+$287.66791000+$286.32992000+$284.9919 -
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Category: Development kits and development boardsDescription: RF development tool Test Board without GaN HEMT85471+$4369.447510+$4329.725325+$4309.864150+$4290.0030100+$4270.1419150+$4250.2808250+$4230.4196500+$4210.5585 -
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Category: Development kits and development boardsDescription: RF Development Tools Test Board without GaN HEMT29771+$5073.618010+$5027.494225+$5004.432350+$4981.3704100+$4958.3085150+$4935.2466250+$4912.1847500+$4889.1228 -
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Category: Classification of electronic componentsDescription: DIODE SCHOTTKY 1.2kV 19A TO252-284355+$31.167650+$29.8357200+$29.0898500+$28.90331000+$28.71682500+$28.50375000+$28.37057500+$28.2373 -
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Category: Classification of electronic componentsDescription: Enhanced High Power RF LDMOS FETs7789 -
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Category: Development kits and development boardsDescription: Test Fixture For Cghv96100f213051+$4411.841510+$4371.733925+$4351.680050+$4331.6262100+$4311.5724150+$4291.5186250+$4271.4647500+$4251.4109 -
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Category: Development kits and development boardsDescription: Test Fixture For Cghv40100p48121+$4560.552710+$4519.093125+$4498.363350+$4477.6336100+$4456.9038150+$4436.1740250+$4415.4442500+$4394.7144 -
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Category: Classification of electronic componentsDescription: RF JFET transistor GaN HEMT 2.9-3.5GHz, 400 Watt64701+$5463.945310+$5414.273125+$5389.437050+$5364.6008100+$5339.7647150+$5314.9286250+$5290.0925500+$5265.2564 -
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Category: MOSpipeDescription: WOLFSPEED CCS020M12CM2 Single transistor bipolar, Six N Channel, 29.5 A, 1.2 kV, 0.08 ohm, 20 V, 2.2 V81071+$3256.564310+$3226.959225+$3212.156650+$3197.3540100+$3182.5515150+$3167.7489250+$3152.9463500+$3138.1438 -
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Category: Classification of electronic componentsDescription: Silicon carbide power MOSFET, N-channel, 22 A, 1 kV, 0.12 ohms, 15 V, 2.1 V60521+$92.197810+$88.1892100+$87.4677250+$86.9064500+$86.02461000+$85.62372500+$85.06255000+$84.5815 -
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Category: Schottky diodeDescription: WOLFSPEED C3D08065A Diode, silicon carbide Schottky, Z-Rec 650V series, single, 650 V, 11 A, 20 nC, TO-22048735+$27.626050+$26.4454200+$25.7843500+$25.61901000+$25.45372500+$25.26485000+$25.14687500+$25.0287 -
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Category: Schottky diodeDescription: Z-Rec™ Silicon carbide Schottky diodes, Wolfspeed's series of Wolfspeed SiC Schottky diodes have achieved significant improvements compared to standard Schottky barrier diodes. SiC diodes provide higher breakdown field strength and higher thermal conductivity, significantly reducing power loss at higher switching frequencies. SiC diodes are the perfect choice for efficient, high-voltage applications such as switch mode power supplies and high-speed inverters. 600、 650, 1200, and 1700 voltage ratings with zero reverse recovery current and temperature independent switching behavior for forward recovery voltage. Extremely fast switching time, minimal loss, positive temperature coefficient. Forward voltage devices can be connected in parallel without the need for heat dissipation, reducing the requirements for heat sinks. Optimized specifically for PFC boost diode applications. # # # Diodes and rectifiers, Cree Wolfspeed11661+$309.281010+$301.212850+$295.0272100+$292.8757200+$291.2620500+$289.11051000+$287.76582000+$286.4211 -
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Category: Classification of electronic componentsDescription: Diode Schottky 600V 7A 2Pin(2+Tab) TO-22042635+$17.328950+$16.5883200+$16.1736500+$16.06991000+$15.96632500+$15.84785000+$15.77377500+$15.6997 -
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Category: Development kitDescription: Evaluation board for all C2M SiC Mosfet gate drivers, suitable for evaluating IXDN609Sl67731+$433.446510+$422.139250+$413.4703100+$410.4550200+$408.1935500+$405.17831000+$403.29372000+$401.4092 -
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Category: Classification of electronic componentsDescription: IC AMP 5.5GHZ-8.5GHZ 30W77801+$4408.472210+$4368.395225+$4348.356750+$4328.3182100+$4308.2797150+$4288.2411250+$4268.2026500+$4248.1641
